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Title: Reliability analysis of switching parameters in resistive random access memories Authors:  Christian Acal - University of Granada (Spain)
Juan Eloy Ruiz-Castro - University of Granada (Spain)
Ana Maria Aguilera - University of Granada (Spain) [presenting]
Francisco Jimenez-Molinos - University of Granada (Spain)
Juan Bautista Roldan - University of Granada (Spain)
Abstract: In the last few years, resistive random access memories (RRAMs) have been proposed as one of the most promising candidates to overcome the current Flash technology in the market of non-volatile memories, because of having optimal properties and outstanding possibilities for fabrication in the present CMOS technology. The stochastic nature of the physical processes behind the operation of resistive memories makes variability one of the key issues to solve from the industrial viewpoint of these new devices. Nowadays and with the purpose of extracting information about this issue, the electronic industry makes use of the Weibull distribution to model reset and set voltages from experimental data measured in these devices. However, in many occasions the weibull fit is not enough accurate and therefore, a different probability distribution must be considered. A new statistical approach based on phase-type modelling is proposed to get better fit and parameter interpretation.