Title: A new statistical approach for modelling reset/set voltages in resistive memories
Authors: Christian Acal - University of Granada (Spain) [presenting]
Juan Eloy Ruiz-Castro - University of Granada (Spain)
Ana Maria Aguilera - University of Granada (Spain)
Francisco Jimenez-Molinos - University of Granada (Spain)
Juan Bautista Roldan - University of Granada (Spain)
Abstract: In the context of applications for non-volatile memories, Resistive Random Access Memories (RRAM) have shown an incomparable potential in the electronic industry. RRAMs have optimal properties and outstanding possibilities for fabrication in the current CMOS technology. However, there are issues, such as variability, that have to be addressed prior to RRAM massive industrialization. The most common statistical analysis performed on experimental data measured in these devices makes use of the Weibull distribution (WD), where the interpretation of the parameters can shed new light to the variability issue and the physics behind RRAM operation. Nevertheless, sometimes the fit obtained with experimental data is not very accurate and therefore, WD does not work correctly. A new reliability analysis based on Phase-Type distributions (PHD) is developed by providing both, better fit and parameter interpretation.